当前选项：IC载板系列
-
射频模组RF
射频模组RF
◆ Structure: 4L，1+2+1，Total thickness:180μm min;◆ Layer alignment: blind via ring width 25μm，Adjacentlayer shift≤25μm，Random layer shift≤40μm◆ MSAP process，trace width tolerance ±5μm ;◆ Surface finish: Thin ENEPIG ( Ni thickness 0.3~0.5μm)
了解详情 > -
应用处理基带芯片AP/FCCSP
应用处理基带芯片AP/FCCSP
◆ Structure : 2L,Total thickness170 μm, core thickness 100μm;◆ MSAP process，L/S=20/20μm◆ 75μm laser dirlled “X” hole ，copper filled.Bonding finger Pitch: 95μm(50/40μm)BOL Pitch: 55μm(25/30μm)◆ Surface finish:Soft Ni/Au+OSP +Etch-back
了解详情 > -
存储类芯片SSD
存储类芯片SSD
◆ Structure: 2L，Total thickness:100 μm min;Mechanical Drilling，Filled Via with SM;Laser Drilling，Filled Via with Copper, dimple≤5μm;◆ Tenting process，L/S≥35/35um;MSAP process,L/S≤25/25μm;◆ SM colour: Green or Black matte /thickness 20+/-7μm,SM Flatness≤7μm;◆ Surface fini...
了解详情 >